S T U/D4525NL
S amHop Microelectronics C orp.
Arp,20 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
25V
F E AT UR E S
( m
W
) T yp
I
D
45A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
7.5 @ V
G S
= 10V
15 @ V
G S
= 4.5V
R ugged and reliable.
TO251 and TO 252 P ackage.
D
D
G
S
G
D
S
G
S TU S E R IE S
TO-252AA(D-P AK)
S TD S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
C
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
Vspike
d
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
25
20
45
75
20
50
-55 to 175
Unit
V
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
a
1
R
JC
R
JA
3
50
C /W
C /W
S T U/D4525NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 20V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
= 5A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 9A
Min Typ
C
Max Unit
25
1
V
uA
100 nA
1
1.8
7.5
15
60
13.5
1485
440
290
3
21
V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
9.5
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C
IS S
C
OS S
C
RSS
c
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
2
V
DD
= 15V
I
D
= 1A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=9A,V
GS
=10V
V
DS
=15V, I
D
=9A,V
GS
=4.5V
V
DS
=15V, I
D
=9A
V
GS
=10V
17.8
52.5
34.6
28.2
29.6
15.8
5.2
8
ns
ns
ns
ns
nC
nC
nC
nC
S T U/D4525NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
S ymbol
Condition
Min Typ Max Unit
0.9
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Diode Forward Voltage
V
GS
= 0V, Is = 20A
V
SD
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
16
V
G S
=4.5V
V
G S
=8V
V
G S
=10V
20
V
G S
=4V
25 C
-55 C
15
I
D
, Drain C urrent(A)
12
I
D
, Drain C urrent (A)
10
T j=125 C
5
8
4
0
V
G S
=3V
0
0
0.5
1
1.5
2
2.5
3
0
0.9
1.8
2.7
3.6
4.5
5.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2400
1.8
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
2000
1.6
1.4
1.2
1.0
0.8
0.6
-55
V
G S
=10V
I
D
=9A
C , C apacitance (pF )
1600
1200
800
C is s
C os s
400
0
C rs s
0
5
10
15
20
25
30
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
S T U/D4525NL
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
24
V
DS
=10V
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
20
16
12
8
4
0
0
5
10
15
20
10.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
400
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=15V
I
D
=9A
100
R
(
DS
)
ON
L im
it
10
10
1s
DC
ms
0m
10 1
s
1
0.1
V
G S
=10V
S ingle P ulse
T
A
=25 C
0.1
1
10 25
60
4
8
12
16
20
24
28 32
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
S T U/D4525NL
V
DD
t
on
V
IN
D
V
G S
R
GE N
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
6
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
10
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
P
DM
t
1
on
0.1
0.05
0.02
0.01
1.
2.
3.
4.
t
2
Single Pulse
0.0001
0.001
0.01
0.1
1
10
0.01
0.00001
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
嵌入式系统
